Case Study: IMECAS (Institute of Microelectronics of the Chinese Academy of Sciences) achieves accurate PDSOI PN-junction modeling with Keysight MBP

IMECAS uses MBP to Create a PDSOI PN Junction Model

IMECAS (Institute of Microelectronics of Chinese Academy of Sciences) needed an accurate PN‑junction model for partially depleted SOI (PDSOI) devices because the standard diode model did not capture the shallow, bias‑dependent junction behavior. To address this, IMECAS worked with Keysight and used Keysight’s Model Builder Program (MBP) to support their device modeling and parameter extraction efforts.

IMECAS implemented a physics‑based PN‑junction model in Verilog‑A that accounts for bottom and lateral junctions and the voltage bias influence on capacitance; Keysight MBP was used to extract and optimize the model parameters. The model closely fits measured CV data (especially in the transition region), can be embedded in MOSFET models, and was validated with a 101‑stage ring oscillator — measured per‑stage delay 511 ps versus simulated 544 ps — demonstrating strong agreement and practical predictive value.

IMECAS

Jianhui Bu

Associate Researcher, Manager