Case Study: Indian Institute of Technology Kanpur achieves industry-first ASM-HEMT GaN transistor model with Keysight

IIT Kanpur Develops ASM-HEMT Model for GaN Transistors Using Parametric and Device Characterization

Indian Institute of Technology Kanpur needed an accurate, yet simple compact SPICE model for GaN transistors to enable fast, trustworthy simulations for RF (5G) and power‑electronics designs. To meet tight schedule and accuracy requirements for transient and high‑frequency behavior, the team used Keysight’s parametric and device characterization solutions, including the B1500 and B1505 analyzers, PNA‑X with load‑pull, and Keysight’s PathWave Device Modeling and ADS software.

Using Keysight tools, Professor Chauhan’s team developed the industry‑first ASM‑HEMT model for GaN HEMTs; Keysight integrated the model into PathWave Device Modeling and it was adopted by multiple other EDA vendors. The ASM‑HEMT passed the Si2‑CMC standardization process, delivers microsecond‑level simulation times with about 1% RMS fitting error, and provides a validated use case for 5G and power‑electronics applications — a clear measurable impact enabled by Keysight.

Indian Institute of Technology Kanpur

Yogesh Chauhan

Professor